Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p− type germanium dioxide coated onto Au/n-CdSe substrates top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers CdSe GeO2. design energy band diagram has shown formation two Schottky arms (Au/n− CdSe, C/GeO2) at interfaces n− CdSe/p− GeO2 layers. capacitance-voltage characteristics recorded in frequency domain 1.0-50.0 MHz ability NMOS PMOS signal controlled built potential tunable range 2.34 5.18 eV. In addition, conductance capacitance spectral analyses 10-1800 domination current conduction by tunneling correlated barriers hoping below above 760 MHz, respectively. addition its features as devices, Au/CdSe/GeO2/C hybrid devices found be appropriate for use microwave cavities.